High-resolution depth profiling and crystallography
Due to the ongoing miniaturization as well as the increasing use of single crystalline materials in electronics we have set up a Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) system in order to perform depth profiling and crystallographic studies for samples which are far too thin to be profiled by conventional ion-beam based analysis.
By this method we are able to obtain information on film composition, homogeneity and crystallography down to 1 nm in thickness. As we employ extremely low beam doses, the investigations are virtually non-destructive.
This method has a not yet fully explored potential in future development of electronics and sensors.
New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector
Part of Review of Scientific Instruments, p. 095107-, 2012.
Ion beam analysis of tungsten layers in EUROFER model systems and carbon plasma facing components
Part of Nuclear Instruments and Methods in Physics Research Section B, p. 355-359, 2016.