High-resolution depth profiling and crystallography

Due to the ongoing miniaturization as well as the increasing use of single crystalline materials in electronics we have set up a Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) system in order to perform depth profiling and crystallographic studies for samples which are far too thin to be profiled by conventional ion-beam based analysis.

By this method we are able to obtain information on film composition, homogeneity and crystallography down to 1 nm in thickness. As we employ extremely low beam doses, the investigations are virtually non-destructive.

This method has a not yet fully explored potential in future development of electronics and sensors.